초록 열기/닫기 버튼
Amorphous carbon (a-C) films have been deposited on Si(100) substrate using RF magnetron system in order to investigate the electron field emission properties. The a-C films were treated by N2 gas plasma at room temperature. Surface morphologices and structural properties of the a-C films before and after N2 plasma treatment were observed by scanning electron microscopy and Raman spectroscope, respectively. Structural properties and surface morphology of the a-C films were changed by N2 plasma treatment. The emission properties can be improved by the plasma treatment according to the contents of nitrogen on the a-C films which is varied by plasma treatment time. Before the plasma treatment, the a-C films are found to have a threshold field of 14 V/μm , but the a-C film treated by N2 plasma for 30 min exhibit threshold field as low as 6.5 V/μm.
키워드열기/닫기 버튼
Plasma treatment, Amorphous carbon, Field emission, Scanning electron microscopy, Raman spectroscopy, XPS
