Woo Young Choi; ByungYongChoi; YoungJinChoi; Dong-SooWoo; Suk-KangSung; JongDukLee; Byung-GookPark
(The Korean Physical Society, 2002-10)
A patterning technique to de ne nanoscale poly-Si lines was developed using a sidewall structure. In this experiment, a sidewall patterning technique made it possible to realize 30-nm, 50-nm, and 80-nm poly-Si lines ...