Seong-Jin Kim; M Ogura; T Sugaya; T Itani; Y Sugiyama
(The Korean Physical Society, 2005-09)
In order to characterize the transit output response of a 0.2-μm dual-gate InGaAs/InAlAs fieldeffect transistor (HEMT), we monolithically integrate a 0.2-μm interdigitated InAlAs-based photoconductive switch (PCS), a 0.2-μm ...