S. M. Durbin; V. J. Kennedy; S. I. Liem; R. J. Reeves; A. Markwitz; V. A. Christie
(The Korean Physical Society, 2004-04)
The remarkable success of GaN-based devices despite comparatively large defect densities has prompted many groups to explorepolycrystalline and amorphous GaN thin lms for various device applications. In this paper we present ...